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• W2554149794 abstract "The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs. The structural properties were changed at the boundary of DGaN=D0 (∼120 nm). Homogeneous InGaN NCs grew axially on the GaN NCs with DGaN≤D0, while InGaN-InGaN core-shell structures were spontaneously formed on the GaN NCs with DGaN&gt;D0. These results can be explained by a growth system that minimizes the total strain energy of the NCs." @default.
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• W2554149794 date "2016-11-01" @default.
• W2554149794 modified "2023-10-03" @default.
• W2554149794 title "Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns" @default.
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• W2554149794 doi "https://doi.org/10.1063/1.4968176" @default.
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