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• W2554779292 abstract "Abstract The periodically patterned Si nanopyramid solar cell shielded with SiN x -passivation layer was fabricated using nano-imprint method. The fabricated nanopyramid Si solar cell demonstrated the near-zero reflectivity over a wide range of wavelengths. With a SiN x -coating layer, nanopyramids showed 0.366% reflection. A SiN x -coated nanopyramid Si is efficient to improve the carrier collection for broad wavelengths due to intrinsically low light-reflection of Si nanopyramid structures. SiN x -passivation effectively controls carrier collection efficiencies of nanopyramid structures, resulting in significant improves short wavelength lights. We systematically investigated optical and electrical performances of nanoscale solar cells and suggest a route to realize high-efficient nanoscale solar cells. The importance and influence of SiN x -passivation layer and nanopyramid structure in Si based solar cell were explained in detail with optical and electrical characteristics." @default.
• W2554779292 created "2016-11-30" @default.
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• W2554779292 date "2017-01-01" @default.
• W2554779292 modified "2023-10-17" @default.
• W2554779292 title "Nano-imprint for near-zero reflected Si solar cells" @default.
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• W2554779292 doi "https://doi.org/10.1016/j.cap.2016.11.008" @default.
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