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• W2555002531 abstract "An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c‑Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts." @default.
• W2555002531 created "2016-11-30" @default.
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• W2555002531 date "2017-02-01" @default.
• W2555002531 modified "2023-09-23" @default.
• W2555002531 title "Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment" @default.
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• W2555002531 doi "https://doi.org/10.1016/j.apsusc.2016.11.119" @default.
• W2555002531 hasPublicationYear "2017" @default.
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