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• W2555020050 abstract "For the past few years, air quality has surged to worldwide attention.For NO x purification, semiconductor photocatlysisas a green technology that could use sunlight to purify air pollutants,provides an attractive alternative to decrease pollution. Recently,polymeric graphitic carbon nitride (g-C 3 N 4 )materials have drawn intensive attention because of its metal-freeand high-hardness features, reliable chemical inertness, thermal stability,as well as its versatile optical, electrochemical, and efficient photocatalyticproperties. But pure g-C 3 N 4 suffers from rapidrecombination of photo- generated electron-hole pairs resulting inlow photocatalytic activity. Thus, several coping modifying methodswere employed to improve the photocatalytic performance of g-C 3 N 4 . The present work developed a facile in situ method to construct novel k-doped g-C 3 N 4 (CN-K) structure with molecular composite precursors.In this work, the samples were prepared via pyrolysis of thioureaand a certain amount of KI as the potassium source in a muffle furnace.Different mass ratio (1%, 3%, 5%, 10%) of K-doping g-C 3 N 4 samples were prepared by changing the amount of KI.The as-prepared samples were systematically characterized by XRD,SEM, TEM, XPS, BET, UV-vis DRS and PL. Material studio was used tosimulated the crystalline structure of potassium doped g-C 3 N 4 . The bond structure of as-prepared samples can be theoreticalcalculation by DFT theoretical calculation. Both the experimentaland theoretical calculation results indicated that potassium ion whichwere formed chemical bond with nitrogen existed in the interlayerof g-C 3 N 4 . The modified catalyst exhibited outstandingphotocatalytic activity and photochemical stability towards degradationof NO at ppb-level under visible light irradiation. The superior activitycan be ascribed to the significant function of potassium ion workedon morphological structure, band gap and electronic-hole recombinationof as prepared samples. Firstly, evidenced by valence band XPS andDFT theoretical calculation, potassium doping has the function ofmodifying band-gap, making for down-shift both conduction band andvalence band, however, The extent of the conduction band down shiftingmore than the valence band, shortening down the optical band gap morewhile making a significant enhancement of the solar light responserange, thus the absorption capacity of as prepared samples strengthensignificantly. Secondly, the separation efficiency of photon-generatedcarriers increased with potassium doped in the interlayer of g-C 3 N 4 verified by room temperature PL spectra. Thirdly,the in situ K-doped g-C 3 N 4 showedhigher oxidation capacity of photo-induced holes for degradating NO,ascribed to a more positive valence band. Integrated three factors,purification efficiency of NO has been significantly improved. Thiswork could provide a new perspective for modification of photocatalystwith alkali metals and mechanism understanding of NO degradation." @default.
• W2555020050 created "2016-11-30" @default.
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• W2555020050 date "2016-07-11" @default.
• W2555020050 modified "2023-09-25" @default.
• W2555020050 title "<italic>In situ </italic>synthesis, band structure analysis and of visible light photocatalysis enhancement mechanism of K-doped C₃N₄" @default.
• W2555020050 doi "https://doi.org/10.1360/n972016-00404" @default.
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