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- W2555494305 abstract "An extremely sensitive dependence of the electronic properties of SnOx film on sputtering deposition power is discovered experimentally. The carrier transport sharply switches from n-type to p-type when the sputtering power increases by less than 2%. The best n-type carrier transport behavior is observed in thin-film transistors (TFTs) produced at a sputtering power just below a critical value (120 W). In contrast, at just above the critical sputtering power, the p-type behavior is found to be the best with the TFTs showing the highest on/off ratio of 1.79 × 104 and the best subthreshold swing among all the sputtering powers that we have tested. A further increase in the sputtering power by only a few percent results in a drastic drop in on/off ratio by more than one order of magnitude. Scanning electron micrographs, x-ray diffraction spectra, x-ray photoelectron spectroscopy, as well as TFT output and transfer characteristics are analyzed. Our studies suggest that the sputtering power critically affects the stoichiometry of the SnOx film." @default.
- W2555494305 created "2016-11-30" @default.
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- W2555494305 date "2016-11-08" @default.
- W2555494305 modified "2023-09-26" @default.
- W2555494305 title "Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power" @default.
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- W2555494305 doi "https://doi.org/10.1038/srep36183" @default.
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