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- W2555608567 abstract "摘要 报道了(GaAs1-xSbx/InyGa1-yAs)/Ga As量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构 为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件，获得了室温1 31μm发光. 关键词: 分子束外延 / 量子阱 / 二型发光 Abstract Photoluminescence study of (GaAs1-xSbx/InyG a1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) s tudy indicated that the band alignment of the BQWs is type - Ⅱ. The origin of the double-peak luminescence was discussed. Under optimized growth conditions, t he PL emission wavelength from the BQWs has been extend up to 131 μm with a s ingle peak at room temperature. Keywords: molecular beam epitaxy / bilayer quantum well / type-Ⅱ luminesce nce 作者及机构信息 徐晓华, 牛智川, 倪海桥, 徐应强, 张 纬, 贺正宏, 韩 勤, 吴荣汉, 江德生 1. 中国科学院半导体研究所 超晶格与微结构国家重点实验室,北京 100083 基金项目: 国家自然科学基金（批准号：90201026， 60137020）、863计划资助和中国博士后科学基金 支持的课题. Authors and contacts Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng 1. 中国科学院半导体研究所 超晶格与微结构国家重点实验室,北京 100083 参考文献 施引文献" @default.
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- W2555608567 date "2005-01-01" @default.
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- W2555608567 title "Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy" @default.
- W2555608567 doi "https://doi.org/10.7498/aps.54.2950" @default.
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