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- W2557375040 abstract "Memristor, as the fourth circuit element which is both a non-linear and a memory device, has been receiving extensive attention in the past years. Recently, the memristive phenomena observed on single layer MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> has attracted scientists attention to the realization of memristor on novel two-dimensional thin film materials. This article presents a novel two-terminal memory device based thin film two-dimensional materials. The black phosphorus/MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> heterojunction based device claims a non-constant resistance that can be continuously tuned by the current flux across the devices." @default.
- W2557375040 created "2016-12-08" @default.
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- W2557375040 date "2016-08-01" @default.
- W2557375040 modified "2023-09-24" @default.
- W2557375040 title "Novel continuously-tunable memristor based on few-layers black phosphorus/MoS<inf>2</inf> heterojunction" @default.
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- W2557375040 doi "https://doi.org/10.1109/nano.2016.7751357" @default.
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