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- W2557974006 abstract "In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al 2 O 3 -based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field." @default.
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- W2557974006 date "2016-06-01" @default.
- W2557974006 modified "2023-09-23" @default.
- W2557974006 title "Status and prospects for atomic layer deposited metal oxide thin films in passivating contacts for c-Si photovoltaics" @default.
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- W2557974006 doi "https://doi.org/10.1109/pvsc.2016.7750088" @default.
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