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- W2558039465 abstract "Multiple-independent-gate (MIG) silicon FinFETs were recently shown capable of enabling: 1) device-level polarity control; 2) dynamic threshold modulation; and 3) subthreshold slope tuning down to ultra-steep-slope operation. These operation mechanisms can unlock a myriad of opportunities in digital as well as analog design. Here we discuss a continuous compact direct-current (dc) model, capable of describing the current–voltage characteristics of a class of MIG FinFETS, namely dual-independent-gate (DIG) FinFETs, over all its biasing design space. This model captures some of the unique features of DIG FinFETs including the dependence of its super-steep subthreshold swing on drain bias and polarity gate bias. An excellent agreement is shown between the model and measured experimental current–voltage characteristics in these devices. Moreover, the predictive nature of the model is evaluated by foreseeing the perspectives of DIG FinFETs as efficient RF detectors at very high frequencies." @default.
- W2558039465 created "2016-12-08" @default.
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- W2558039465 date "2017-01-01" @default.
- W2558039465 modified "2023-10-05" @default.
- W2558039465 title "A Continuous Compact DC Model for Dual-Independent-Gate FinFETs" @default.
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- W2558039465 doi "https://doi.org/10.1109/jeds.2016.2632709" @default.
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