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• W2558170606 abstract "In this contribution, we have studied the impact of aluminum precursor of atomic layer deposited (ALD) AI2O3 on the passivation quality of silicon solar cell emitters. Aluminum precursors, Trimethylaluminum (TMA) and Dimethylaluminum chloride (DMACl), and their different combinations were used to deposit Al 2 O 3 layers on both phosphorus and boron implanted emitters. In addition to measuring the passivation quality, the wafers experienced thermal stability investigation. In all wafers, Al 2 O 3 resulted in better emitter saturation current as compared to thermal oxide resulting from ion implantation drive-in anneal. On industrial type of emitters, values around J oe at 60 fA/cm2 were obtained. The impact of aluminium source was not as high as expected, however, we found that aluminium precursor has a high impact on the formation of so-called blisters. We show that the blisters can be greatly suppressed using DMACl as the aluminium precursor while TMA results in the formation of high-density and large-size blisters. Our PERC solar cell with the DMACl in the ALD process showed similar passivation quality as the TMA-based process." @default.
• W2558170606 created "2016-12-08" @default.
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• W2558170606 date "2016-06-01" @default.
• W2558170606 modified "2023-09-23" @default.
• W2558170606 title "Mixed aluminum precursor in the atomic layer deposited Al<inf>2</inf>O<inf>3</inf> for effective silicon emitter passivation" @default.
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• W2558170606 doi "https://doi.org/10.1109/pvsc.2016.7750176" @default.
• W2558170606 hasPublicationYear "2016" @default.
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