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• W2558778872 abstract "Here we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application." @default.
• W2558778872 created "2016-12-08" @default.
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• W2558778872 date "2016-11-30" @default.
• W2558778872 modified "2023-09-24" @default.
• W2558778872 title "Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications" @default.
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• W2558778872 doi "https://doi.org/10.1007/s11664-016-5150-9" @default.
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