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- W2559066403 abstract "Abstract In the phase-change memory (PCM) crystallization occurs in the high-current filament which forms during switching to the conductive state. In the present paper we conduct a numerical modeling of the current filament formation dynamics in thin chalcogenide films using an electronic-thermal model based on negative-U centers tunnel ionization and Joule heating. The key role of inhomogeneities in the filament formation process is shown. Steady-state filament parameters were obtained from the analysis of the stationary heat conduction equation. The filament formation dynamics and the steady-state filament radius and temperature could be controlled by material parameters and contact resistance. Consequently it is possible to control the size of the region wherein crystallization occurs. A good agreement with numerous experimental data leads to the conclusion that thermal effects play a significant role in CGS conduction and high-current filament formation while switching." @default.
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- W2559066403 date "2017-03-01" @default.
- W2559066403 modified "2023-09-30" @default.
- W2559066403 title "Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM" @default.
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- W2559066403 doi "https://doi.org/10.1016/j.sse.2016.11.018" @default.
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