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- W2559508545 abstract "Traps in Cu(In, Ga)Se <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (CIGS) deposited by listage and 3-stage co-evaporation processes were characterized using conventional deep level transient and optical spectroscopies (DLTS/DLOS) and scanning-DLTS to quantity and map the deep levels associated with the different growth approaches. Two defects were observed at E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</sub> + 0.44/0.50 eV and E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</sub> + 0.97 eV. The total deep level trap concentration was found to vary primarily due to the E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</sub> + 0.97 eV trap, which was ~4X larger in the 1-stage sample. This large increase correlates with the reduced open circuit voltage and conversion efficiency typically observed in 1-stage co-evaporation grown CIGS, suggesting that controlling the presence and concentration of this level may be important to enable high-efficiency CIGS solar cells using simpler processes." @default.
- W2559508545 created "2016-12-08" @default.
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- W2559508545 date "2016-06-01" @default.
- W2559508545 modified "2023-10-14" @default.
- W2559508545 title "Identifying the source of reduced performance in 1-stage-grown Cu(In, Ga)Se<inf>2</inf> solar cells" @default.
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- W2559508545 doi "https://doi.org/10.1109/pvsc.2016.7750353" @default.
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