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• W2559853836 abstract "The optical and electric properties of an l-cysteine film have been investigated to understand its applicability to bioelectronics. The fundamental absorption is the allowed transition having the threshold at 5.8 eV and the absorption is due to the charge-transfer type transition from sulfur-3sp to oxygen-2p and/or carbon-2p states, while absorptions more than 9 eV can be explained with intra-atomic transitions in the functional groups. The electric resistivity is 2.0 × 104 Ω m at room temperature and increases as the sample temperature decreases. The results indicate that the l-cysteine film is a p-type semiconductor showing the hole conduction caused by the sulfur-3sp occupied states and unknown impurity or defect states as acceptors. The electron affinity of the l-cysteine film is derived as ≦−0.3 eV." @default.
• W2559853836 created "2016-12-16" @default.
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• W2559853836 date "2016-12-15" @default.
• W2559853836 modified "2023-09-27" @default.
• W2559853836 title "Optical Absorption and Electric Resistivity of anl-Cysteine Film" @default.
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• W2559853836 doi "https://doi.org/10.7566/jpsj.85.124713" @default.
• W2559853836 hasPublicationYear "2016" @default.
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