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- W2560506926 abstract "Silicon detectors are being used for several applications involving detection and measurement of position and energy of particles, such as alpha particles, fission fragments, heavy ions etc [1]. One of the most important performance requirements of any silicon detector is the dark-state reverse bias leakage current, i.e. dark current. This sets the limit of noise. Limit of the leakage current sets an important parameter for acceptance or rejection of a detector. The depletion width also increases with the square root of the reverse bias voltage, so increasing the bias voltage will increase the sensitive volume and reduce the capacitance. For a charge particle traversing the detector, this increases the signal charge and reduces the electronic noise; however maximum applied reverse bias is limited. C-V (capacitance versus voltage) profiling is done to characterize threshold voltages [2]. It could also be used to analyze the doping profiles of semiconductor devices since dopant concentration affects the width of depletion region. The fabrication process and the dicing process do not ensure the full quality of the sensors, so the fundamental properties of the detectors have to be evaluated prior to the large scale production and installation of the detector in the experiment. The most important parameters which contribute to the noise at the input of the read-out electronics, are the leakage current of every detector and detector capacitance [3]. The leakage current measurement and capacitance versus voltage profile for 1 cm 2 Si (PIN) pad detector of 300 μm thickness are presented in this paper." @default.
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- W2560506926 date "2013-01-01" @default.
- W2560506926 modified "2023-09-28" @default.
- W2560506926 title "I-V and C-V characterization of Silicon Pad Detectors" @default.
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