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- W2561390202 abstract "The authors explore advanced techniques for rapid annealing, and discover that thermal treatment of Au-based electrodes on GaAs wires leads to the formation of sharp metal-semiconductor Schottky junctions. This type of nanocontact features an axial heterointerface deep inside the nanowire, yielding marked diode behavior. With ultralow capacitance, nonlinear transport effects, and pointlike emission of white light, these nanostructures have potential for applications in high-speed electrooptic detectors, signal transducers, and localized spectroscopy." @default.
- W2561390202 created "2017-01-06" @default.
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- W2561390202 date "2015-10-20" @default.
- W2561390202 modified "2023-10-16" @default.
- W2561390202 title "Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires" @default.
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- W2561390202 doi "https://doi.org/10.1103/physrevapplied.4.044010" @default.
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