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• W2561454403 abstract "We studied the two-step photon absorption (TSPA) process in InAs/GaAs quantum-dot superlattice (QDSL) solar cells. TSPA of subband-gap photons efficiently occurs when electrons are pumped from the valence band to the states above the inhomogeneously distributed fundamental states of QDSLs. The photoluminescence (PL)-excitation spectrum demonstrates an absorption edge attributed to the higher excited states of the QDSLs in between the InAs wetting layer states and the fundamental states of QDSLs. When the absorption edge of the excited state was resonantly excited, the superlinear excitation power dependence of the PL intensity demonstrated that the electron and hole created by the interband transition separately relax into QDSLs. Furthermore, time-resolved PL measurements demonstrated that the electron lifetime is extended by thereby inhibiting recombination with holes, enhancing the second subband-gap absorption." @default.
• W2561454403 created "2017-01-06" @default.
• W2561454403 creator A5009887817 @default.
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• W2561454403 date "2015-05-18" @default.
• W2561454403 modified "2023-09-30" @default.
• W2561454403 title "Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells" @default.
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• W2561454403 doi "https://doi.org/10.1103/physrevb.91.201303" @default.
• W2561454403 hasPublicationYear "2015" @default.
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