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- W2562307582 abstract "Intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this paper, the authors report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study is usually limited to macroscopic samples with micrometer-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio, and rectification ratio. The feasibility of the IR-RS for selection device-free memory application is demonstrated by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit." @default.
- W2562307582 created "2017-01-06" @default.
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- W2562307582 date "2016-12-19" @default.
- W2562307582 modified "2023-10-15" @default.
- W2562307582 title "Built-In-Homojunction-Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection-Device-Free Memory Application" @default.
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- W2562307582 doi "https://doi.org/10.1002/aelm.201600361" @default.
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