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• W2562715087 abstract "In this letter, we report an in-situ predeposition plasma nitridation process, which is adopted to remove the GaN surface oxygen-related bonds and reduce surface dangling bonds by forming Ga-N bonds prior to the low-pressure chemical vapor deposition (LPCVD)Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> deposition. It demonstrates that the Vth hysteresis and current collapse of the device were dramatically improved due to high-quality LPCVD-Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> /GaN interface. The MIS-HEMTs using this in-situ pre-deposition plasma nitridation exhibit a very-low Vth hysteresis of 186 mV at VG-sweep = (-30 V, +24 V), a high breakdown voltage of 881 V with the substrate grounded. Meanwhile, the MIS-HEMT dynamic RON is only 18% larger than the static RON after OFF-state VDS stress of 600 V (the OFF to ON switching time interval is set to 200 μs)." @default.
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• W2562715087 date "2017-02-01" @default.
• W2562715087 modified "2023-10-16" @default.
• W2562715087 title "AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator" @default.
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• W2562715087 doi "https://doi.org/10.1109/led.2016.2636136" @default.
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