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• W2562828415 abstract "We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100) substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC." @default.
• W2562828415 created "2017-01-06" @default.
• W2562828415 creator A5012033210 @default.
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• W2562828415 date "2016-12-01" @default.
• W2562828415 modified "2023-09-27" @default.
• W2562828415 title "Low-energy SiC₂H₆⁺ and SiC₃H₉⁺ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations" @default.
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• W2562828415 doi "https://doi.org/10.1063/1.4972206" @default.
• W2562828415 hasPublicationYear "2016" @default.
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