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• W2563435044 abstract "The paper presents the experimental results of the combination of AFM lithography and plasma chemical etching the surface of the gallium arsenide samples. Results dilution and application modes for AFM lithography photoresist, also shown on the image forming modes photoresist surface. Showing results nanoprofilirovaniya surface. Results regimes plasma chemical etching. The analysis of the etching rate is etched surface roughness was studied by atomic force microscopy. Judged from the vertical deflection angle of the initial structures and photoresist obtained after etching." @default.
• W2563435044 created "2017-01-06" @default.
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• W2563435044 date "2016-12-30" @default.
• W2563435044 modified "2023-09-24" @default.
• W2563435044 title "A study of the vertical walls and the surface roughness GaAs after the operation in the combined plasma etching" @default.
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• W2563435044 doi "https://doi.org/10.1117/12.2267120" @default.
• W2563435044 hasPublicationYear "2016" @default.
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