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• W2564432402 abstract "The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases with increasing thickness. The phase diagrams of InGaN films grown on GaN substrate have been calculated. There is a small effect of surface energies of solid phases on the phase diagrams of epitaxial film. With increasing the thickness of InGaN films the wurtzite phase is found to be decreased. This is due to the increase of thickness, misfit dislocations and the commencing of phase separation. Accurate information of InGaN nano film is applicable for the innovation of III-nitride based nano-electronics system." @default.
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• W2564432402 date "2016-05-01" @default.
• W2564432402 modified "2023-09-25" @default.
• W2564432402 title "Theoretical investigation of Gibb's free energy and phase diagram for In<inf>x</inf>Ga<inf>1−x</inf>N nano-film system" @default.
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• W2564432402 doi "https://doi.org/10.1109/iciev.2016.7760072" @default.
• W2564432402 hasPublicationYear "2016" @default.
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