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- W2564707649 abstract "Abstract The intrinsically massively parallel nature of optical imaging has made optical lithography the mainstay method for patterning photoresist for five decades. In optical systems, the achievable resolution is directly proportional to the wavelength of light used which has led to a continual shrink in patterning wavelengths with the transition to extreme ultraviolet (EUV, 13.5 nm) now underway. This transition is also leading to several challenges and opportunities in the patterning materials space. In this chapter, we describe the key EUV technology challenges impacting photoresist, address photoresist stochastics, which is arguably the most fundamental challenge facing the EUV patterning materials themselves and provide an overview of the progress made in EUV resists over the past decade." @default.
- W2564707649 created "2017-01-06" @default.
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- W2564707649 date "2016-01-01" @default.
- W2564707649 modified "2023-09-26" @default.
- W2564707649 title "EUV lithography patterning challenges" @default.
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- W2564707649 doi "https://doi.org/10.1016/b978-0-08-100354-1.00005-3" @default.
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