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• W2564943612 endingPage "90" @default.
• W2564943612 startingPage "85" @default.
• W2564943612 abstract "Group IV materials with the hexagonal diamond crystal structure have been predicted to exhibit promising optical and electronic properties. In particular, hexagonal silicon–germanium (Si1–xGex) should be characterized by a tunable direct band gap with implications ranging from Si-based light-emitting diodes to lasers and quantum dots for single photon emitters. Here we demonstrate the feasibility of high-quality defect-free and wafer-scale hexagonal Si1–xGex growth with precise control of the alloy composition and layer thickness. This is achieved by transferring the hexagonal phase from a GaP/Si core/shell nanowire template, the same method successfully employed by us to realize hexagonal Si. We determine the optimal growth conditions in order to achieve single-crystalline layer-by-layer Si1–xGex growth in the preferred stoichiometry region. Our results pave the way for exploiting the novel properties of hexagonal Si1–xGex alloys in technological applications." @default.
• W2564943612 created "2017-01-06" @default.
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• W2564943612 creator A5084118317 @default.
• W2564943612 creator A5090497794 @default.
• W2564943612 date "2016-12-27" @default.
• W2564943612 modified "2023-09-23" @default.
• W2564943612 title "Single-Crystalline Hexagonal Silicon–Germanium" @default.
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• W2564943612 doi "https://doi.org/10.1021/acs.nanolett.6b03488" @default.
• W2564943612 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/28001429" @default.
• W2564943612 hasPublicationYear "2016" @default.
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