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- W2565225226 abstract "Abstract For super thin dielectric MOS capacitor, capacitance extraction by using two-element model is erroneous. Three-element model, considering parasitic parameters of parallel resistance Rp and series resistance Rs, is necessary. In this paper, we develop a single frequency correction method by combining capacitance-voltage (C-V) and current-voltage (I-V) data. By equating impedances of three-element model with that of two-element model, we obtain two characteristic equations. By using a differential resistance dV/dI, we obtain the third equation. Consequently, three real parameters for the capacitance C, the Rp and the Rs are solved. As an application example of Al/HfO2/n-Si MOS, we demonstrate physically reasonable values for all three real parameters. Furthermore, dielectric loss tangent tan δ is calculated as 0.005–0.022 at 1.5 V. A simplified expression of measured capacitance Cm about the C, the Rp, the Rs and angular frequency ω has been deduced. A constraint condition for large ratio Cm/C suggests the reduction of the ratio Rs/Rp and Rs. Considering suitable values for tan δ and ratio of Cm/C, applicable frequency range is from 15 kHz to 1.1–2.1 MHz." @default.
- W2565225226 created "2017-01-06" @default.
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- W2565225226 date "2017-03-01" @default.
- W2565225226 modified "2023-10-18" @default.
- W2565225226 title "Single frequency correction based on three-element model for thin dielectric MOS capacitor" @default.
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- W2565225226 doi "https://doi.org/10.1016/j.sse.2016.12.012" @default.
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