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• W2565321542 abstract "Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm−3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm−3 for which ρc is as low as 2 × 10−5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model." @default.
• W2565321542 created "2017-01-06" @default.
• W2565321542 creator A5040568622 @default.
• W2565321542 creator A5060324422 @default.
• W2565321542 creator A5091294520 @default.
• W2565321542 date "2016-12-19" @default.
• W2565321542 modified "2023-10-14" @default.
• W2565321542 title "Low <i>p</i>-type contact resistance by field-emission tunneling in highly Mg-doped GaN" @default.
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• W2565321542 doi "https://doi.org/10.1063/1.4972408" @default.
• W2565321542 hasPublicationYear "2016" @default.
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