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- W2565584080 abstract "Chalcogenide materials, formed from metallic alloys of S, Se, and Te, have received considerable attention for applications in optoelectronic devices over the past two decades in part due to their unique properties such as high infrared transparency, strong photosensitivity, large nonlinearity, capability of high rare-earth doping, and ability to readily change phase. Thin amorphous chalcogenide films are of particular interest because their diverse active properties are easily exploited in integrated planar optical circuits, as well as for memory and other optoelectronic applications. More recently, transition metal dichalcogenides (TMDCs), two-dimensional (2D) layered materials, such as MoS2, MoSe2, WS2, and WSe2 have become a noteworthy complimentary material to field. Sharing many of the properties of graphene they also offer properties that are unattainable in 2D graphene including a tunable bandgap; easily modified through both composition and the number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. In this talk we describe our development of functional chalcogenide materials by the chemical vapour deposition technology and discuss their potential applications." @default.
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- W2565584080 date "2016-10-13" @default.
- W2565584080 modified "2023-09-27" @default.
- W2565584080 title "Emerging CVD technology for functional chalcogenide materials" @default.
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