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• W2565736263 abstract "We study the junction behavior of poly (3,4-ethylenedioxythiophene):polystyrenesulphonate/n-Si hybrid organic/inorganic heterojunction by reverse recovery transient (RRT) characterization. RRT response for PEDOT:PSS/n-Si hybrid junction is reported for various n-Si doping concentration and forward bias current injection level. The presence of settling time of 8.3–23.5 μs in the RRT response in contradiction to Schottky junction model commonly assumed for PEDOT:PSS/n-Si hybrid structure. The decrease in the minority carrier lifetime from 126.8 μs to 39.5 μs with increased n-Si doping concentration, suggests that minority carriers are stored at n-Si side of the junction, which is consistent with a p+-n junction model for the hybrid structure. The minority carrier lifetime is found to depend on forward bias current injection level, attributed to trap-saturation effect of the recombination-centers at the PEDOT:PSS/n-Si junction. The DC-IV characteristics of the PEDOT:PSS/n-Si hybrid junction are also consistent with the notion of diffusion and trap assisted recombination dominated dark current. The diffusion dominated transport of PEDOT:PSS/n-Si leads to an ideal p+-n junction behavior that leverages on the good transport properties of Si. Our findings are important in the modeling and optimization of the characteristics of electronic devices based on the organic/Si hybrid junction." @default.
• W2565736263 created "2017-01-06" @default.
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• W2565736263 date "2017-03-01" @default.
• W2565736263 modified "2023-09-28" @default.
• W2565736263 title "Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction" @default.
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• W2565736263 doi "https://doi.org/10.1016/j.orgel.2016.12.022" @default.
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