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- W2566549063 abstract "In this paper we report a study of the effect of vacuum annealing at 400°C on the properties of normal metal-insulator-superconductor (NIS) tunnel junctions, with manganese doped aluminium (Al:Mn) as the normal metal, aluminum as the superconductor and amorphous aluminum oxide as the tunneling barrier (Al:Mn-AlOx-Al). The annealing treatment improves the stability of the junctions, increases their tunneling resistance and does not have a negative impact on the low-temperature current-voltage characteristics. The measured 1/f resistance noise of the junctions also changes after annealing, in the best case decreasing by over an order of magnitude. All these observations show that annealing is a viable route to improve NIS junction devices after the sample has been fabricated." @default.
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- W2566549063 date "2016-12-01" @default.
- W2566549063 modified "2023-10-10" @default.
- W2566549063 title "Stability, sub-gap current, 1/f-noise, and elemental depth profiling of annealed Al:Mn-AlOX-Al normal metal-insulator-superconducting tunnel junctions" @default.
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- W2566549063 doi "https://doi.org/10.1063/1.4972205" @default.
- W2566549063 hasPublicationYear "2016" @default.
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