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- W2568753455 abstract "Abstract In this study, transparent Li–N co-doped ZnSnO (ZTO: (Li, N)) thin film transistors (TFTs) with a staggered bottom-gate structure were fabricated by radio frequency magnetron sputtering at room temperature. Emphasis was placed on investigating the effects of post-annealing temperature on their physical and electrical properties. An appropriate post-annealing temperature contributes not only to achieving good quality thin films, but also to improving the electrical performance of the ZTO: (Li, N) TFTs. The ZTO: (Li, N) TFTs annealed at 675 °C showed the best electrical characteristics with a high saturation mobility of 26.8 cm 2 V −1 s −1 , a threshold voltage of 6.0 V and a large on/off current ratio of 4.5×10 7 ." @default.
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- W2568753455 date "2017-04-01" @default.
- W2568753455 modified "2023-09-23" @default.
- W2568753455 title "Preparation and effects of post-annealing temperature on the electrical characteristics of Li–N co-doped ZnSnO thin film transistors" @default.
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- W2568753455 doi "https://doi.org/10.1016/j.ceramint.2016.12.145" @default.
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