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• W2568768075 abstract "Highly oriented () Ga2−x Zn x O3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)' under 254 nm ultraviolet excitation, and the maximum was obtained at x = 0.8. A metal–semiconductor–metal structured solar-blind photodetector based on Ga2−x Zn x O3 (x = 0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for β-Ga2−x Zn x O3 (x = 0.8) photodetector were observed with 254 nm ultraviolet illumination." @default.
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• W2568768075 date "2017-01-30" @default.
• W2568768075 modified "2023-10-17" @default.
• W2568768075 title "Improvement for the performance of solar-blind photodetector based on<i>β-</i>Ga₂O₃thin films by doping Zn" @default.
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• W2568768075 doi "https://doi.org/10.1088/1361-6463/aa5758" @default.
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