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- W2568831457 abstract "Abstract A split gate SOI trench LDMOSFET (SGT-LDMOS) structure is proposed and the low-resistance channel is introduced to further reduces the specific on-state resistance (Ron,sp). The split gate SOI trench LDMOS with low on-resistance channel (SGTL-LDMOS) structure shows a reduction in specific on-state resistance (Ron,sp) compared to that of a conventional SOI trench LDMOS (CT-LDMOS) and SGT-LDMOS structures. This is due to the increased N-type concentration in the drift region and the lower channel resistance. In addition, the split-gate floating structure in the SGTL-LDMOS also reduces the specific gate-charge (Qg,sp) and increases the breakdown voltage as compared to the CT-LDMOS. As a result, the breakdown voltage (BV) of the SGTL-LDMOS increases from 183 V of the CT-LDMOS to 227 V, the Ron,sp decreases from 43.4 mΩ cm2 to 9.3 mΩ cm2, and the Qg,sp decreases from 78.4 nC/cm2 to 50.0 nC/cm2." @default.
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- W2568831457 date "2017-02-01" @default.
- W2568831457 modified "2023-09-24" @default.
- W2568831457 title "Split gate SOI trench LDMOS with low-resistance channel" @default.
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- W2568831457 doi "https://doi.org/10.1016/j.spmi.2017.01.001" @default.
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