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- W2569750295 abstract "High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At -195°C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures." @default.
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- W2569750295 date "2016-11-01" @default.
- W2569750295 modified "2023-10-18" @default.
- W2569750295 title "Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures" @default.
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- W2569750295 doi "https://doi.org/10.1109/wipda.2016.7799923" @default.
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