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• W2574149780 abstract "Moving transistors downscale One option for extending the performance of complementary metal-oxide semiconductor (CMOS) devices based on silicon technology is to use semiconducting carbon nanotubes as the gates. Qiu et al. fabricated top-gated carbon nanotube field-effect transistors with a gate length of 5 nm. Thin graphene contacts helped maintain electrostatic control. A scaling trend study revealed that, compared with silicon CMOS devices, the nanotube-based devices operated much faster and at much lower supply voltage, and they approached the limit of one electron per switching operation. Science , this issue p. 271" @default.
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• W2574149780 date "2017-01-20" @default.
• W2574149780 modified "2023-10-17" @default.
• W2574149780 title "Scaling carbon nanotube complementary transistors to 5-nm gate lengths" @default.
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• W2574149780 doi "https://doi.org/10.1126/science.aaj1628" @default.
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