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• W2575801939 abstract "Introduction. Semiconductor compounds of elements of the second and sixth groups of the periodic table play an important part in modern semiconductor physics and engineering, being most important and promising materials in a series of rapidly developing branches of science and technology, especially photo- and optoelectronics, quantum radiophysics, and acoustoelectronics. This is primarily connected with the fact that these compounds have various values of the band-gap width: from zero to several electron-volts, which makes it possible to vary their electric, photoelectric, and optical properties over a wide range. The conductivity of substances of this class can vary from values corresponding to a semimetal to those characteristic for an insulator, and the spectral zone of photosensitivity - from IR to UV. In this connection interest is growing in investigating various physical properties of the compounds mentioned, in particular, narrow-band-gap semiconductors, which (especially solid CdxHgl_xTe solutions with x = 0.2-0.3) have been widely used in recent years as a material for fabricating photosensors operating in the ranges 3-5 and 8- 14/~m. Photosensors fabricated from these compounds already dominate in IR imaging technology and lidar and communication systems. Several methods of production of cadmium and mercury tellurides exist. The present work is devoted to mathematical modeling of laser-induced diffusion processes for production of semiconductor materials based on AB-type compounds with a predetermined width of the band gap (CdxHgl_xTe alloys). A one-dimensional physicomathematical model based on diffusion and heat conduction equations and transfer equations for the laser radiation with temperature- and concentration-dependent coefficients is employed. In order to investigate a series of qualitative regularities, self-similar solutions are considered. In the general case the analysis is carried out numerically. The aim of the present work is to analyze the possibility of use of lasers to form semiconductor materials with a required width of the band gap in the system of an epitaxial film of a narrow-band-gap semiconductor and a substrate of a wide-band-gap AB-type semiconductor. The possible qualitative character of phenomena taking place in the course of this process is described, e.g., in [ l ]. Laser radiation with a wavelength corresponding to the width of the band gap of the material being produced passes through a transparent wide-band-gap semiconductor and is absorbed by a narrow-band-gap one. As a result, intense local heating takes place at the interface of the materials, which leads to acceleration of mutual diffusion and formation of a semiconductor alloy having a band gap of an intermediate width. Repeated laser action leads to motion of the zone of localized absorption toward the film-air interface and formation of an alloy of the required composition. The processes of mutual diffusion can be controlled by varying parameters of the laser radiation and the original materials." @default.
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• W2575801939 date "1996-01-01" @default.
• W2575801939 modified "2023-09-27" @default.
• W2575801939 title "MODELING OF DIFFUSION PROCESSES" @default.
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