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• W2577400404 abstract "GaP nanowires (NWs) were grown on a Si substrate by gas source molecular beam epitaxy using self-assisted growth. Selective-area growth was achieved using a patterned oxide mask. Periodic GaAsP marker layers were introduced during growth to study the growth progression using transmission electron microscopy. We demonstrate control of the NW morphology via the V/III flux ratio, the pattern pitch, and the oxide hole diameter. As the V/III flux ratio was increased from 1 to 6, the NWs showed a reduced top diameter and increased height. Reduced oxide hole diameter and increased V/III flux ratio caused the Ga droplet to be consumed partway through the growth for some NWs, leading to a switch from VLS group V limited growth to diffusion limited growth." @default.
• W2577400404 created "2017-01-26" @default.
• W2577400404 creator A5023217169 @default.
• W2577400404 creator A5061697648 @default.
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• W2577400404 date "2017-03-01" @default.
• W2577400404 modified "2023-09-26" @default.
• W2577400404 title "Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy" @default.
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• W2577400404 doi "https://doi.org/10.1016/j.jcrysgro.2017.01.025" @default.
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