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- W2578066820 abstract "This paper investigates the application of hafnium oxide (HfO2) thin films to crystalline silicon (c-Si) solar cells. Excellent passivation of both n- and p-type crystalline silicon surfaces has been achieved by the application of thin HfO2 films prepared by atomic layer deposition. Effective surface recombination velocities as low as 3.3 and 9.9 cm s−1 have been recorded with 15 nm thick films on n- and p-type 1 Ω cm c-Si, respectively. The surface passivation by HfO2 is activated at 350 °C by a forming gas anneal. Capacitance voltage measurement shows an interface state density of 3.6 × 1010 cm−2 eV−1 and a positive charge density of 5 × 1011 cm−2 on annealed p-type 1 Ω cm c-Si. X-ray diffraction unveils a positive correlation between surface recombination and crystallinity of the HfO2 and a dependence of the crystallinity on both annealing temperature and film thickness. In summary, HfO2 is demonstrated to be an excellent candidate for surface passivation of crystalline silicon solar cells." @default.
- W2578066820 created "2017-01-26" @default.
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- W2578066820 date "2017-01-09" @default.
- W2578066820 modified "2023-10-14" @default.
- W2578066820 title "Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide" @default.
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- W2578066820 doi "https://doi.org/10.1063/1.4973988" @default.
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