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- W2578356082 abstract "In this work, semiconductor quantum structures are studied to show enhanced performance in the near-infrared and blue wavelength regions. The techniques presented in this thesis include AlN passivation of GaAs surfaces and GaAs-based quantum dot structures in the near-infrared region. In the blue wavelength region, one-dimensional metal gratings are fabricated on GaN structures. All of these techniques have potential applications in optoelectronic components including nanowire-based detectors, metal-insulator-semiconductor structures, and light-emitting diodes. The GaAs-based structures are fabricated by metalorganic vapor phase epitaxy, and the AlN layers are deposited ex situ by plasma-enhanced atomic layer deposition. The passivation effect is verified by photoluminescence, time-resolved photoluminescence, photoreflectance, and capacitance-voltage measurements. The comparison of pure plasma and AlN passivation shows that plasma has a role in the process. The effect cannot, however, be entirely explained by plasma, and hydrogen is suggested to affect the passivation. When the AlN layer thickness is further increased, the delicate strain-induced quantum dots are covered without reducing the integrated photoluminescence intensity. In addition, the energy redshift of the quantum dot states is not affected by the covering with AlN. Thus, AlN can be used to cover these delicate structures. GaAsN islands are fabricated on InP by annealing tensile-strained GaAsN layers. The nitrogen in the layer reduces the band gap of GaAs. Therefore, the photoluminescence intensity maximum is observed to shift towards the longer wavelengths of optical telecommunications. In the blue wavelength region, the GaN structures are characterized by photoluminescence, angle-resolved photoluminescence and reflectometry measurements. When a polyvinyl alcohol layer is fabricated on top of the InGaN/GaN sample, the enhancement of emission is observed in both TM and TE polarizations. The photoluminescence intensity is shown to increase by a factor of up to 2.8.; Tassa vaitoskirjassa tutkitaan puolijohdekvanttirakenteiden ominaisuuksien parantamista lahi-infrapunan ja sinisen aallonpituusalueilla. Tassa tyossa esitetyt menetelmat kasittavat AlN passivoinnin ja GaAs-pohjaiset kvanttipisterakenteet lahi-infrapuna-alueella. Sinisella alueella yksiulotteisia metallihiloja on valmistettu GaN-rakenteiden paalle. Kaikilla nailla on potentiaalisia sovelluksia optoelektronisissa komponenteissa kuten nanolankapohjaisissa detektoreissa, metalli-eriste-puolijohde-rakenteissa ja valodiodeissa. GaAs-rakenteet on valmistettu organometallisella kaasufaasimenetelmalla, ja AlN-kerrokset on tehty erikseen GaAs-rakenteen paalle (engl. ex situ) atomikerroskasvatusmenetelmalla. Passivoinnin toimivuus todennetaan fotoluminesenssi-, fotoreflektanssi- ja kapasitanssi-jannitemittauksin seka aikariippuvilla fotoluminesenssimittauksilla. AlN-passivointia verrataan pelkalla plasmalla tehtyyn passivointiin, ja tulokset osoittavat, etta plasmalla on myos merkitysta…" @default.
- W2578356082 created "2017-01-26" @default.
- W2578356082 creator A5026168880 @default.
- W2578356082 date "2016-01-01" @default.
- W2578356082 modified "2023-09-26" @default.
- W2578356082 title "Semiconductor quantum structures for applications in the near infrared and blue regions" @default.
- W2578356082 hasPublicationYear "2016" @default.
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