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• W2578498115 abstract "High-density phase change material (PCM) array is considered to be an efficient method to decrease operation voltage and power of phase change random access memory (PCRAM). In the paper, the Si₂Sb₂Te₅ (SST) array was fabricated by UV-imprint lithography (UV-IL) and the memory array with 18M/Inch² were constructed. Structural transformation of SST film in heating process was in situ studied by using time-resolved X-ray diffraction. The threshold current and threshold voltage for SST based memory cell are 9.9&#956;A and 0.23V, respectively. After 20ns pulse width inspired, Set/Reset switching operation was achieved and the resistance ratio reached 34. The results show that the SST have potential application in the low-voltage, high-speed storage. The outstanding performance of SST and the new structure enables it to become the new storage devices." @default.
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• W2578498115 date "2008-12-11" @default.
• W2578498115 modified "2023-09-22" @default.
• W2578498115 title "Array with phase change material Si 2 Sb 2 Te 5 fabricated by UV-imprint lithography" @default.
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• W2578498115 doi "https://doi.org/10.1117/12.820901" @default.
• W2578498115 hasPublicationYear "2008" @default.
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