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• W2579341777 abstract "A survey of non-volatile, highly scalable memory devices which utilize dedicated resistive switching phenomena in nanoscale chalcogenide-based memory cells is presented. The classification of the memory effects, the understanding of the underlying mechanisms, and the crucial role of structural defects are outlined." @default.
• W2579341777 created "2017-01-26" @default.
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• W2579341777 date "2009-09-01" @default.
• W2579341777 modified "2023-09-26" @default.
• W2579341777 title "Function by defects at the atomic scale &#x2014; new concepts for non-volatile memories" @default.
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• W2579341777 doi "https://doi.org/10.1109/esscirc.2009.5325927" @default.
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