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- W2579751981 abstract "In this paper, we report the formation of vertical GaN Schottky barrier diodes (SBDs) on a 2-in. free-standing (FS) GaN wafer, using CMOS-compatible contact material. By realizing an off-state breakdown voltage VBR of 1200 V and an on-state resistance Ron of 7 mΩ·cm2, the FS-GaN SBDs fabricated in this work achieve a power device figure-of-merit of 2.1 × 108 V2·Ω−1·cm−2 on a high quality GaN wafer. In addition, the fabricated FS-GaN SBDs show the highest Ion/Ioff current ratio of ∼2.3 × 1010 among the GaN SBDs reported in the literature." @default.
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- W2579751981 date "2017-01-13" @default.
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- W2579751981 title "1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material" @default.
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- W2579751981 doi "https://doi.org/10.7567/jjap.56.026501" @default.
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