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• W2579917012 abstract "FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 °C after 250K program/erase cycles is confirmed for advanced automotive system applications." @default.
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• W2579917012 date "2017-01-23" @default.
• W2579917012 modified "2023-09-26" @default.
• W2579917012 title "First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond" @default.
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