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- W2579968994 abstract "This thesis provides a combination of experimental and computational approaches to investigation of structure-related mechanical behavior of pure and deliberately defected GaAs, InAs, GaSb semiconductor crystals as well as amorphous and nanocrystalline BiFeO3-based multiferroic materials. A similar approach is frequently used to examine role of strain and defects to program discrete energy levels in quantum dots, lasers, photoelectrons, or to provide a sound evaluation of mechanical properties of nanomaterials. The mechanical response of nanomaterials are described by parameters which range from a stress-strain relation to a fundamental description of atomistic interactions.The mechanical properties of GaAs, GaSb and BiFeO3 materials within framework of a nanoindentation experiment are elaborated on. Essential material parameters like Young's modulus, hardness, true hardness or yield strength defined as elastic-plastic transition - which is caused either by phase transition or nucleation of defects in studied materials - are addressed throughout thesis. The nanoindentation results of BiFeO3 material obtained by atomic layer deposition are in line with data obtained by means of other methods, such as Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, X-ray Diffraction and X-ray Photoelectron Spectroscopy. These results clearly demonstrate that nanoindentation is a convenient method to reveal mechanical dependence of stages of BFO film crystallization and finally BiFeO3 structure formation.Molecular Dynamics and ab initio approaches are used to study elastic and electronic properties of InAs and GaAs crystals containing various amounts of vacancies. The introduction of any vacancies into a crystal structure results in a linear decrease in elastic constants and lattice-parameters that causes effect known as the softening of Furthermore, projected density of states analysis indicated donor-like character of VGa, VIn vacancies and acceptor-like characteristics of VAs, respectively. Two different kinds of interatomic potential were used, namely parameterized empirical potential of Abell-Tersoff type and pseudo-potential; former was found to provide more suitable results.The successful modeling of elastic behavior of defected structures provided an expanded insight into problem of impact of silicon admixture on onset of plastic deformation in GaAs crystals under nanoindentation testing. It was found that an introduction of Si dopants resulted in decrease of contact pressure at elastic-plastic transition (pop-in event) and reduction of pressure of GaAs-I - GaAs-II phase transformation suggesting there is a non-dislocation characteristic to elastic-plastic transition in this material." @default.
- W2579968994 created "2017-02-03" @default.
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- W2579968994 date "2016-01-01" @default.
- W2579968994 modified "2023-09-27" @default.
- W2579968994 title "Towards III-V compound semiconductors and multiferroics equipped with nanoindentation and atomistic calculations" @default.
- W2579968994 hasPublicationYear "2016" @default.
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