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- W2580699661 abstract "Thin films of c-Si–QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ∼400 °C, without post-deposition annealing. The formation of larger size c-Si–QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent ‘c-Si–QDs in a-SiOx’, as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si–QDs. A finite distribution of the size of c-Si–QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si–QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells." @default.
- W2580699661 created "2017-02-03" @default.
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- W2580699661 date "2017-01-26" @default.
- W2580699661 modified "2023-09-27" @default.
- W2580699661 title "Fabrication of double barrier structures in single layer c-Si–QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells" @default.
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- W2580699661 doi "https://doi.org/10.1063/1.4974739" @default.
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