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W258312944 abstract "We studied the effect of the hydrogen (H2) purge duration on the growth kinetics in atomic layer epitaxy (ALE) of InAs and InP. The InAs and InP growth rates decreased as we increased the post-arsine (ASH3) and post-phosphine (PH3) purge times. The growth rates were independent of the post-trimethylindium (TMIn) purge times, however. Our results imply that arsenic and phosphorus atoms are desorbed from the outermost As- and P-terminated surface of the grown layers. The In-terminated surface seems to be more stable, preventing desorption of group-V atoms beneath the surface. We attained ideal growth with optimized, short, post-AsH3 and post-PH3 purges. The periods of (InAs)m(InP)n short- period strained-layer superlattices decreased and the surface morphology deteriorated as the post-AsH3 H2 purge time increased. Our photoluminescence measurements for an ultrathin InAs/InP single quantum wells also indicated As desorption from the surface. Fast gas switching from the hydrides to TMIn suppresses the desorption of As and P and makes the resultant InAs/InP heterointerfaces atomically abrupt." @default.
W258312944 created "2016-06-24" @default.
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W258312944 date "1994-01-01" @default.
W258312944 modified "2023-09-27" @default.
W258312944 title "Fabrication of atomically-controlled InAs/InP hetero-interface by atomic layer epitaxy" @default.
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W258312944 doi "https://doi.org/10.1016/b978-1-4832-8382-1.50044-6" @default.
W258312944 hasPublicationYear "1994" @default.
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