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• W2583516669 abstract "Radiation-induced defect annealing in He+ ion-implanted 4H-SiC via H+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He+ ions with fluences ranging from 5.0x10(15) cm(-2) to 2.0 x 10(16) cm(-2) at room temperature. The post-implantation samples are irradiated by 260 keV H+ ions at a fluence of 5.0 x 10(15) cm(-2) at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm(-1), which is assigned to 3C-SiC LO (Gamma) phonon, is found in the He-implanted sample with a fluence of 5.0 x 10(15) cm(-2) followed by H irradiation. However, for the He-implanted sample with a fluence of 2.0 x 10(16) cm(-2) followed by H irradiation, no 3C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4H-SiC is discussed." @default.
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• W2583516669 date "2017-01-01" @default.
• W2583516669 modified "2023-10-08" @default.
• W2583516669 title "H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC" @default.
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• W2583516669 doi "https://doi.org/10.1088/0256-307x/34/1/012801" @default.
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