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• W2585427879 abstract "We report on vertically stacked horizontal Si NanoWires (NW) /»-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated with inner spacers and SiGe source-drain (S/D) stressors. Recessed and epitaxially re-grown SiGe(B) S/D junctions are shown to be efficient to inject strain into Si/-channels. The Precession Electron Diffraction (PED) technique, with a nm-scale precision, is used to quantify the deformation and provide useful information about strain fields at different stages of the fabrication process. Finally, a significant compressive strain and excellent short-channel characteristics are demonstrated in stacked-NWs /-FETs." @default.
• W2585427879 created "2017-02-10" @default.
• W2585427879 creator A5000491120 @default.
• W2585427879 creator A5003247262 @default.
• W2585427879 creator A5005291555 @default.
• W2585427879 creator A5006283495 @default.
• W2585427879 creator A5011833416 @default.
• W2585427879 creator A5012358414 @default.
• W2585427879 creator A5012657801 @default.
• W2585427879 creator A5013032665 @default.
• W2585427879 creator A5013826681 @default.
• W2585427879 creator A5016596658 @default.
• W2585427879 creator A5017288533 @default.
• W2585427879 creator A5019983362 @default.
• W2585427879 creator A5033364386 @default.
• W2585427879 creator A5033867079 @default.
• W2585427879 creator A5033961551 @default.
• W2585427879 creator A5034316269 @default.
• W2585427879 creator A5039748766 @default.
• W2585427879 creator A5041567052 @default.
• W2585427879 creator A5043810178 @default.
• W2585427879 creator A5047025172 @default.
• W2585427879 creator A5050302547 @default.
• W2585427879 creator A5054838625 @default.
• W2585427879 creator A5058361959 @default.
• W2585427879 creator A5059206991 @default.
• W2585427879 creator A5062297281 @default.
• W2585427879 creator A5068051865 @default.
• W2585427879 creator A5074822583 @default.
• W2585427879 creator A5075841601 @default.
• W2585427879 creator A5079991262 @default.
• W2585427879 creator A5080214707 @default.
• W2585427879 creator A5080830367 @default.
• W2585427879 creator A5083023348 @default.
• W2585427879 creator A5084582066 @default.
• W2585427879 date "2016-12-01" @default.
• W2585427879 modified "2023-10-16" @default.
• W2585427879 title "Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain" @default.
• W2585427879 cites W1974686349 @default.
• W2585427879 cites W2030086814 @default.
• W2585427879 cites W2083695772 @default.
• W2585427879 cites W2084888978 @default.
• W2585427879 cites W2411296057 @default.
• W2585427879 doi "https://doi.org/10.1109/iedm.2016.7838441" @default.
• W2585427879 hasPublicationYear "2016" @default.
• W2585427879 type Work @default.
• W2585427879 sameAs 2585427879 @default.
• W2585427879 citedByCount "62" @default.
• W2585427879 countsByYear W25854278792017 @default.
• W2585427879 countsByYear W25854278792018 @default.
• W2585427879 countsByYear W25854278792019 @default.
• W2585427879 countsByYear W25854278792020 @default.
• W2585427879 countsByYear W25854278792021 @default.
• W2585427879 countsByYear W25854278792022 @default.
• W2585427879 countsByYear W25854278792023 @default.
• W2585427879 crossrefType "proceedings-article" @default.
• W2585427879 hasAuthorship W2585427879A5000491120 @default.
• W2585427879 hasAuthorship W2585427879A5003247262 @default.
• W2585427879 hasAuthorship W2585427879A5005291555 @default.
• W2585427879 hasAuthorship W2585427879A5006283495 @default.
• W2585427879 hasAuthorship W2585427879A5011833416 @default.
• W2585427879 hasAuthorship W2585427879A5012358414 @default.
• W2585427879 hasAuthorship W2585427879A5012657801 @default.
• W2585427879 hasAuthorship W2585427879A5013032665 @default.
• W2585427879 hasAuthorship W2585427879A5013826681 @default.
• W2585427879 hasAuthorship W2585427879A5016596658 @default.
• W2585427879 hasAuthorship W2585427879A5017288533 @default.
• W2585427879 hasAuthorship W2585427879A5019983362 @default.
• W2585427879 hasAuthorship W2585427879A5033364386 @default.
• W2585427879 hasAuthorship W2585427879A5033867079 @default.
• W2585427879 hasAuthorship W2585427879A5033961551 @default.
• W2585427879 hasAuthorship W2585427879A5034316269 @default.
• W2585427879 hasAuthorship W2585427879A5039748766 @default.
• W2585427879 hasAuthorship W2585427879A5041567052 @default.
• W2585427879 hasAuthorship W2585427879A5043810178 @default.
• W2585427879 hasAuthorship W2585427879A5047025172 @default.
• W2585427879 hasAuthorship W2585427879A5050302547 @default.
• W2585427879 hasAuthorship W2585427879A5054838625 @default.
• W2585427879 hasAuthorship W2585427879A5058361959 @default.
• W2585427879 hasAuthorship W2585427879A5059206991 @default.
• W2585427879 hasAuthorship W2585427879A5062297281 @default.
• W2585427879 hasAuthorship W2585427879A5068051865 @default.
• W2585427879 hasAuthorship W2585427879A5074822583 @default.
• W2585427879 hasAuthorship W2585427879A5075841601 @default.
• W2585427879 hasAuthorship W2585427879A5079991262 @default.
• W2585427879 hasAuthorship W2585427879A5080214707 @default.
• W2585427879 hasAuthorship W2585427879A5080830367 @default.
• W2585427879 hasAuthorship W2585427879A5083023348 @default.
• W2585427879 hasAuthorship W2585427879A5084582066 @default.
• W2585427879 hasBestOaLocation W25854278792 @default.
• W2585427879 hasConcept C110738630 @default.
• W2585427879 hasConcept C119599485 @default.
• W2585427879 hasConcept C127413603 @default.
• W2585427879 hasConcept C136525101 @default.
• W2585427879 hasConcept C142724271 @default.
• W2585427879 hasConcept C165801399 @default.
• W2585427879 hasConcept C171250308 @default.
• W2585427879 hasConcept C172385210 @default.
• W2585427879 hasConcept C192562407 @default.
• W2585427879 hasConcept C204787440 @default.

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