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• W2585733367 abstract "An atomic-scale numerical study of Si contact with transition metal dichalcogenides (TMD) semiconductor materials is proposed by first-principles simulation for the first time. The monolayer MoS 2 channel can be operated as both of n- and p-type FET by properly doping Si S/D to adjust the TMD channel potential. The gradient MoS x junction of dichalcogenide vacancies enables Si-MoS 2 contact resistance lower than 100Ω-μm for interface Schottky barrier height reduction. The compact Si-MoS 2 interface study can potentially provide monolayer TMD contact design guideline for the sub-5 nm TMD FET fabrication technology." @default.
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• W2585733367 date "2016-12-01" @default.
• W2585733367 modified "2023-10-18" @default.
• W2585733367 title "A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET" @default.
• W2585733367 cites W2021994802 @default.
• W2585733367 doi "https://doi.org/10.1109/iedm.2016.7838415" @default.
• W2585733367 hasPublicationYear "2016" @default.
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