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- W2586369726 abstract "Abstract Copper antimony sulfide (CuSbS 2 ) thin films were prepared by annealing and rapid thermal processing (RTP) of Sb 2 S 3 –Cu precursor layers at different conditions. Sb 2 S 3 thin films (200 nm) were deposited by chemical bath deposition from a solution containing SbCl 3 and Na₂S₂O₃. Copper layers were thermally evaporated onto the Sb 2 S 3 thin films. A systematic study was done by varying Cu layer thickness as well as the heating conditions. Cu thickness was varied from low ( 2 S 3 thickness, Cu 50 nm was identified as the effective Cu thickness for the formation of CuSbS 2 . The CuSbS 2 thin films formed at different conditions were incorporated in photovoltaic structures of superstrate configuration: Glass/ITO/CdS/CuSbS 2 . The best photovoltaic parameters obtained were V oc =665 mV, J sc =1.35 mA/cm 2 , FF=0.62 and η=0.6% measured under illumination using AM1.5 radiation from a solar simulator. V oc and FF are the highest values ever reported for the CuSbS 2 based solar cells. The present work strengthens the research activities to improve CuSbS 2 based photovoltaic performance, and thus PV technologies using earth abundant and non-toxic materials." @default.
- W2586369726 created "2017-02-17" @default.
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- W2586369726 date "2017-05-01" @default.
- W2586369726 modified "2023-10-02" @default.
- W2586369726 title "CuSbS2 thin films by rapid thermal processing of Sb2S3-Cu stack layers for photovoltaic application" @default.
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- W2586369726 doi "https://doi.org/10.1016/j.solmat.2017.02.005" @default.
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