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• W2587341729 abstract "Surface reconstructions during homoepitaxial growth of GaN (0001) are studied using reflection high-energy electron diffraction and scanning tunneling microscopy. In agreement with previous workers, a distinct transition from rough to smooth morphology is seen as a function of Ga to N ratio during growth. However, in contrast to some prior reports, no evidence for a 2×2 reconstruction during GaN growth is observed. Observations have been made using four different nitrogen plasma sources, with similar results in each case. A 2×2 structure of the surface can be obtained, but only during nitridation of the surface in the absence of a Ga flux." @default.
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• W2587341729 date "1998-01-01" @default.
• W2587341729 modified "2023-10-17" @default.
• W2587341729 title "Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)" @default.
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• W2587341729 doi "https://doi.org/10.1557/s1092578300000843" @default.
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